ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high per

Varactors (Surface Mount)

Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high performance wirele

ENHANCED PERFORMANCE SURFACE MOUNT EPSM?줙yperabrupt Varactor Diodes TM

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包装：散装 描述：SI TVAR NON HERMETIC EPSM SMT 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

包装：散装 描述：SI TVAR NON HERMETIC EPSM SMT 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

DSP Microcomputers with ROM

GENERAL DESCRIPTION The ADSP-216x Family processors are single-chip microcomputers␣ optimized␣ for␣ digital␣ signal␣ processing␣ (DSP) and other high speed numeric processing applications. The ADSP-216x processors are all built upon a common core with ADSP-2100. Each processor combines the core D

I2C BUS NTSC 1 CHIP FOR COLOR TV

The KA2163 is a monolithic integrated circuit for VIF, SIF, chroma and deflection circuit of NTSC color TV. The KA2163 also provides audio / video switch and OSD interface. It combines these functions in a 56 SDIP package and the KA2163B also includes I2C bus control functions for automatically ad

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

ADSP-2100 Family DSP Microcomputers

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