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KV1911A

UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES

DESCRIPTION The KV1900 series of Super Hyperabrupt Varactor diodes combines low voltage with high ratio tuning. They feature grown junction mesa technology for the highest Q commercially available. Passivation is our tough MIL-Spec ceramic glass for lowest leakage even at temperature extremes or

MICROSEMI

美高森美

KV1911A

Varactors (Packaged and Die form)

The KV1900 series of Super Hyperabrupt Varactor diodes combines low voltage with high ratio tuning. They feature grown junction mesa technology for the highest Q commercially available. Passivation is our tough MIL-Spec ceramic glass for lowest leakage even at temperature extremes or dense SiO2 for

MICROCHIP

微芯科技

KV1911A

VARACTOR DIODES UHF Microwave Super-Hyperabrupt Junction

文件:90.56 Kbytes Page:2 Pages

MICROSEMI

美高森美

VARACTOR DIODES UHF Microwave Super-Hyperabrupt Junction

文件:90.56 Kbytes Page:2 Pages

MICROSEMI

美高森美

VARACTOR DIODES UHF Microwave Super-Hyperabrupt Junction

文件:90.56 Kbytes Page:2 Pages

MICROSEMI

美高森美

Dolby B/C Type Noise Reduction System with Playback Equalizer

Description The CXA1911Q is an IC designed for use in carstereo cassette decks. Functions include Dolby B/C type noise reduction, playback equalizer amplifier and music sensor into a single chip. Features • Few external parts • Forward/Reverse head switching • Small package

SONYSony Corporation

索尼

Dolby B/C Type Noise Reduction System with Playback Equalizer

Description The CXA1911Q is an IC designed for use in carstereo cassette decks. Functions include Dolby B/C type noise reduction, playback equalizer amplifier and music sensor into a single chip. Features • Few external parts • Forward/Reverse head switching • Small package

SONYSony Corporation

索尼

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1911 is a switching device which can be driven directly by a 2.5-V power source. The µPA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

NEC

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1911 is a switching device which can be driven directly by a 2.5-V power source. The µPA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

NEC

瑞萨

KV1911A产品属性

  • 类型

    描述

  • 型号

    KV1911A

  • 制造商

    MICROSEMI

  • 制造商全称

    Microsemi Corporation

  • 功能描述

    UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES

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