EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)

GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two(TR, Diode) devices in TESV. (Thin Extreme Super mini type with 5pin.) • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages