EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)

GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two(TR, Diode) devices in TESV. (Thin Extreme Super mini type with 5pin.) • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)

HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

High Efficiency Rectifiers

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirem