EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. • Complementary to KTN2907AE.

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.\nSWITCHING APPLICATION.FEATURES\n• Low Leakage Current\n   : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.\n• Low Saturation Voltage\n   : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.\n• Complementary to KTN2907AE. • Low Leakage Current\n   : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.\n• Low Saturation Voltage\n   : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.\n• Complementary to KTN2907AE. ;

Quad General Purpose Transistors

Quad General Purpose Transistors NPN Silicon

Quad General Purpose Transistors

Quad General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement