N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)

ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES • 2.5 Gate Drive. • Low Threshold Voltage : Vth=0.5ᴕ 1.5V. • High Speed. • Small Package. • Enhancement-Mode.

ANALOG SWITCH APPLICATIONS

N CHANNEL MOS FIELD EFFECT TRANSISTOR

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N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：46.81 Kbytes Page：3 Pages

ANALOG SWITCH APPLICATIONS

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Dual 256-Position SPI Digital Potentiometer

GENERAL DESCRIPTION The AD5162 provides a compact 3 mm × 4.9 mm packaged solution for dual, 256-position adjustment applications. This device performs the same electronic adjustment function as a 3-terminal mechanical potentiometer. Available in four end-toend resistance values (2.5 kΩ, 10 kΩ, 50

Dual, 256-Position, SPI Digital Potentiometer

GENERAL DESCRIPTION The AD5162 provides a compact 3 mm × 4.9 mm packaged solution for dual, 256-position adjustment applications. This device performs the same electronic adjustment function as a 3-terminal mechanical potentiometer. Available in four end-toend resistance values (2.5 kΩ, 10 kΩ, 50

High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz

FEATURES ► Frequency range: 0.4 GHz to 8 GHz ► Low insertion loss: 0.6 dB typical to 4 GHz ► High Isolation: 45 dB typical to 4 GHz ► High input linearity ► 0.1 dB power compression (P0.1dB): 50 dBm ► Third order intercept (IP3): >76 dBm ► High power handling at TCASE = 85°C: ► Insertion l

High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz

FEATURES ► Frequency range: 0.4 GHz to 8 GHz ► Low insertion loss: 0.6 dB typical to 4 GHz ► High Isolation: 45 dB typical to 4 GHz ► High input linearity ► 0.1 dB power compression (P0.1dB): 50 dBm ► Third order intercept (IP3): >76 dBm ► High power handling at TCASE = 85°C: ► Insertion l

18 (16/30) AWG Tinned Copper

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