TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER)

TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 45ᴕ50W Audio Frequency Amplifier Output Stage. • Complementary to KTB688.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • Complement to Type KTB688 APPLICATIONS • Audio frequency power amplifier applications • Recommend for 45-50W audio frequency amplifier output stage applications

General Purpose Transistor, TO-3P(N), 120V, 10A

• Recommended for 45~50W Audio Frequency \n• Amplifier Output Stage\n• Complementary to KTB688;

General Purpose Transistor, TO-3P(N)-E, 120V, 10A

• General Purpose Application\n• Suitable for using Swtiching Application;

TRIPLE DIFFUSED NPN TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 45~50W Audio Frequency Amplifier Output Stage. • Complementary to KTB688B.

TRIPLE DIFFUSED NPN TRANSISTOR

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Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 6A Peak Pulse Current * Excellent HFE Characteristics up to 6Amps * Extremely Low Saturation Voltage E.g. 16mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 96mΩ at 2.5A

丝印代码：718；SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

Silicon epitaxial planar type

Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low vo

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A (pulsed) * low saturation voltage * IC Cont 2.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX618