EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • 1W (Mounted on Ceramic Substrate). • Small Flat Package. • Complementary to KTB1260.

Epitaxial Planar NPN Transistors

Epitaxial Planar NPN Transistors P/b Lead(Pb)-Free

1A , 100V NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application

TRANSISTOR (NPN)

FEATURES Small Flat Package General Purpose Application

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● General Purpose Application

Power Transistor

FEATURES ● High VCEO,VCEO=80V. ● High IC,IC=1A(DC). ● Good HFE Linearity. ● Low VCE(sat). ● Complement the 2SB1260. APPLICATIONS ● NPN silicon transistor.

NPN Transistors

■ Features ● Small Flat Package ● General Purpose Application

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Small flat package,complements the KTB1260. Applications General purpose application.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 100 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Low Collector-Emitter Saturation Voltage

Power Transistor

FEATURES High VCEO,VCEO=80V. High IC,IC=1A(DC). Good HFE Linearity. Low VCE(sat). Complement the 2SB1260. APPLICATIONS NPN silicon transistor.

NPN Transistors

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NPN Plastic Encapsulated Transistor

文件：77.53 Kbytes Page：1 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：402.38 Kbytes Page：3 Pages

NPN TRANSISTOR

文件：127.42 Kbytes Page：1 Pages

双极型晶体管

晶体管

NPN Transistors

■ Features ● Small Flat Package ● General Purpose Application

1A , 100V NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • 1W (Mounted on Ceramic Substrate). • Small Flat Package. • Complementary to KTB1260.

1A , 100V NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN Transistors

■ Features ● Small Flat Package ● General Purpose Application

NPN Transistors

■ Features ● Small Flat Package ● General Purpose Application

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN Transistors

文件：337.03 Kbytes Page：1 Pages

NPN TRANSISTOR

文件：127.42 Kbytes Page：1 Pages

NPN Plastic Encapsulated Transistor

文件：77.53 Kbytes Page：1 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：402.38 Kbytes Page：3 Pages

NPN Transistors

文件：337.03 Kbytes Page：1 Pages

NPN Plastic Encapsulated Transistor

文件：77.53 Kbytes Page：1 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：402.38 Kbytes Page：3 Pages

NPN Plastic Encapsulated Transistor

文件：77.53 Kbytes Page：1 Pages

NPN Transistors

文件：337.03 Kbytes Page：1 Pages

中等功率双极型晶体管

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Transistors

文件：337.03 Kbytes Page：1 Pages

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1898 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating c

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 4.8

Omnipolar Operation

Description The AH1898 is a micropower magnetic range selectable (Bop/Brp) Omnipolar Hall effect switch IC with internal pull up and pull down capability, designed for portable and battery powered consumer equipment such as cellular phones and portable PCs. To support battery powered equipment an

NPN Epitaxial Planar Transistor

DESCRIPTION The BCP1898 is designed for switching applications.

5X7 mm SMD, 1.8V, LVCMOS Clock Oscillator

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