TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER DARLINGTON)

HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. FEATURES • Complementary to KTB2510. • Recommended for 60W Audio Amplifier Output Stage.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A • High DC Current Gain : hFE= 5000(Min) @ IC= 7A, VCE= 4V • Complement to Type KTB2510 APPLICATIONS • High power amplifier application

Darlington transistor, TO-3P(N), 150V, 10A

• Recommended for 60W Audio Amplifier Output Stage.;

TRIPLE DIFFUSED NPN TRANSISTOR

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