EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING)

AUDIO MUTING APPLICATION. FEATURES • High Emitter-Base Voltage : VEBO=12V(Min.). • High Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). • Low on Resistance : RON=0.6Ω (Max.) (IB=1mA).

NPN EPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR p/b Lead(Pb)-Free

丝印代码：MAX；NPN Silicon Epitaxial Planar Transistor

FEATURES • High emitter-base voltage. • High reverse hFE. • Low on resistance. APPLICATIONS • Audio muting application.

TRANSISTOR (NPN)

FEATURES • High emitter-base voltage • low on resistance

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • High emitter-base voltage • low on resistance

丝印代码：MAX；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High emitter-base voltage. ● High reverse hFE. ● Low on resistance. APPLICATIONS ● Audio muting application.

High emitter-base voltage

FEATURES • High emitter-base voltage • low on resistance

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High VEBO, high reverse hFE, low on resistance. Applications Audio muting application.

Plastic-Encapsulate Transistors

FEATURES • High emitter-base voltage • low on resistance

NPN Plastic Encapsulated Transistor

FEATURES • High emitter-base voltage: VEBO=12V(Min) • low on resistance: Ron=0.6Ω(max)(IB=1mA)

普通三极管

双极型晶体管

双极型晶体管

丝印代码：MAX；NPN Silicon Epitaxial Planar Transistor

文件：155 Kbytes Page：3 Pages

NPN Silicon Epitaxial Planar Transistor

文件：155 Kbytes Page：3 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：359.92 Kbytes Page：2 Pages

NPN Transistors

文件：971.17 Kbytes Page：2 Pages

NPN Plastic Encapsulated Transistor

文件：250.29 Kbytes Page：2 Pages

NPN Transistors

文件：1.00224 Mbytes Page：2 Pages

Vertical Output Applications Power Amplifier Applications

Vertical Output Applications Power Amplifier Applications • Complement to KSC3296

Low Distortion Wideband Reverse Amplifier Modules

The RF Line Low Distortion Wideband Reverse Amplifier Modules Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for low–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadband Po

Low Distortion Wideband Reverse Amplifier Modules

The RF Line Low Distortion Wideband Reverse Amplifier Modules Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for low–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadband Po

MEDIUM POWER AMPLIFIER GaAs MMIC

文件：109.66 Kbytes Page：8 Pages

CCD LINEAR IMAGE SENSOR

文件：511.54 Kbytes Page：14 Pages