EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING)

AUDIO MUTING APPLICATION. FEATURES • High Emitter-Base Voltage : VEBO=12V(Min.). • High Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). • Low on Resistance :RON=0.6ή (Typ.) (IB=1mA).

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage

S OT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage

丝印代码：1302；NPN Transistors

■ Features ● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage

丝印代码：1302；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Small Flat Package Audio Muting Application High Emitter-Base Voltage

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low on Resistance: Ron=0.6Ω(Typ.)(IB=1.0mA). Applications Audio muting applications.

Audio Muting Transistor, TO-92, 20V, 0.3A

• High Emitter-Base Voltage : VEBO=12V(min.)\n• Low on Resistance : Ron=0.6ohm (typ.) (IB=1mA).;

普通三极管

双极晶体管

NPN Transistors

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EPITAXIAL PLANAR NPN TRANSISTOR

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15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — Hi

MEDIUM POWER AMPLIFIER GaAs MMIC

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