EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING)

AUDIO MUTING APPLICATION. FEATURES • High Emitter-Base Voltage : VEBO=12V(Min.). • High Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). • Low on Resistance :RON=0.6ή (Typ.) (IB=1mA).

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage

S OT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage

NPN Transistors

■ Features ● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low on Resistance: Ron=0.6Ω(Typ.)(IB=1.0mA). Applications Audio muting applications.

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Small Flat Package Audio Muting Application High Emitter-Base Voltage

EPITAXIAL PLANAR NPN TRANSISTOR

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NPN Transistors

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200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

Customer Specification

Construction Diameters (In) 1) Component 1 2 X 1 PAIR a) Conductor 22 (SOLID) AWG Tinned Copper 0.025 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.045 (1) Color Code Alpha Wire Color Code A Pair Color Pair Color Pair Color 1 BLACK-RED 2 BLACK-WHITE c) Pair 2/Cond Cabled Together (1) T

Window “View Port” Plugs

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Drywall Punch

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