Low VCE(sat) Transistor, TSM, 20V, 3A

• Adoption of MBIT Processes\n• High Current Capacitance\n• Low Collector to Emitter saturation Voltage\n• High Speed Switching;

TSM PACKAGE

文件：349.59 Kbytes Page：1 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：85.41 Kbytes Page：3 Pages

TSM PACKAGE

文件：349.59 Kbytes Page：1 Pages

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

3V to 5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with 짹15kV ESD Protection

General Description The MAX3535E/MXL1535E isolated RS-485/RS-422 full duplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor or control logic side. These devices allow fast, 1000kbps communication across an isolation barrier when the common-mod

35 Amp Rectifier 20 to 100 Volts Schottky Barrier

文件：115.54 Kbytes Page：2 Pages

Low power GSM/DCS/PCS multi-band transceiver

文件：118.44 Kbytes Page：24 Pages