EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO)

HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit) FEATURES • Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A) • High Performance at Low Supply Voltage.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 20V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 3A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

EPITAXIAL PLANAR NPN TRANSISTOR

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Pry Out Plugs

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100 KHz Highpass Filter Elliptic Type 40 dB min Rejection at 80 KHz SMA Connectors

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100 KHz Highpass Filter

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Blue Hose짰, 1 Pr #18 Str TC, PO Ins, OSTC Brd, PVC Jkt, 600V TC

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3.3 V, 짹15 kV ESD-Protected, Half- and Full-Duplex, RS-485/RS-422 Transceivers

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