EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) • High Speed Switching Time : tstg=1 S(Typ.) • Complementary to KTA1718D/L.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.5V(Max) @IC= 1A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

Switching Transistor, DPAK, 50V, 2A

• Low Collector Saturation Voltage : VCE(sat)=0.5V(max.) (Ic=1A)\n• High Speed Switching Time : tstg=1.0ms(typ.)\n• Complementary to KTA1718D.;

EPITAXIAL PLANAR NPN TRANSISTOR

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1.25 WATT

DESCRIPTION DRS DC/DC converters offer excellent regulation and isolation in an industry standard package. Available in several input versions, the DRS is ideal for industrial, datacom, or telecom applications. The DRS features short circuit protection and 500 VDC isolation. Please see the DRD

DUAL OUTPUT, 5 WATT

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DUAL HIGH-SPEED MOSFET DRIVERS

文件：663 Kbytes Page：31 Pages

DUAL HIGH-SPEED MOSFET DRIVERS

文件：663 Kbytes Page：31 Pages

DUAL HIGH-SPEED MOSFET DRIVERS

文件：663 Kbytes Page：31 Pages