EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTA1700.

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) • Complement to Type KTA1700 APPLICATIONS • Designed for high voltage applications

General Purpose Transistor, TO-126, 160V, 1.5A

• High Transition Frequency : fT=100MHz(typ.)\n• Complementary to KTA1700.;

EPITAXIAL PLANAR NPN TRANSISTOR

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TRIACs 8 AMPERES RMS 200 thru 600 VOLTS

Triac Bidirectional Triode Thyristors . . .designed primarily for full-wave ac control applications, suchas light dimmers, motor controls, heating controls and power supplies. • Blocking Voltage to 600 Volts • All Diffused and GlassPassivated Junctions for Greater Parameter Uniformi

PREAMPLIFIER FOR INFRARED REMOTE CONTROL

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

PREAMPLIFIER FOR INFRARED REMOTE CONTROL

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Low-Power BiCMOS Current-Mode PWM

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Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages