EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DPAK FOR SVRFACE MOUNT)

GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. • Straight Lead (IPAK, L Suffix) • Complementary to KTA1040D/L.

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DPAK FOR SVRFACE MOUNT)

GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. • Straight Lead (IPAK, L Suffix) • Complementary to KTA1040D/L.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features Low VCE(sat),complementary to KTA1040D. Applications General purpose amplifier for surface mount applications.

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. • Complementary to KTA1040D

Silicon NPN transistor in a TO-251 Plastic Package.

Descriptions Silicon NPN transistor in a TO-251 Plastic Package. Features Low VCE(sat),complementary to KTA1040I. Applications General purpose amplifier for surface mount applications.

General Purpose Transistor, IPAK, 60V, 3A

• General Purpose Application\n• Suitable for using Swtiching Application;

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.0V(Max) @IC= 2A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DPAK FOR SVRFACE MOUNT)

GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. • Straight Lead (IPAK, L Suffix) • Complementary to KTA1040D/L.

双极晶体管

EPITAXIAL PLANAR NPN TRANSISTOR

文件：667.07 Kbytes Page：2 Pages

双极晶体管

EPITAXIAL PLANAR NPN TRANSISTOR

文件：676.25 Kbytes Page：2 Pages

Dual Balanced Modulator IC

■ Overview The AN2020S is an integrated circuit which incorporates two balanced modulators. It can be used for a video-frequency-band dual amplifier, variable gain amplifier, balanced modulator, demodulator, etc. ■ Features • Low voltage operation:4.8V(typ.) • Carrier suppression:–43dB(typ.)

Integrated Circuit 8-Channel Darlington Array/Driver

Description: Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads, the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction