TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-3A, IB=-0.3A. • Collector Power Dissipation : PC=30W (Tc=25°C). • Complementary to KTD1351.

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

EPITAXIAL PLANAR PNP TRANSISTOR

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA988 is designed for use in driver stages AF amplifier.

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High gain • High AGC-range • Low feedback capacitance • Low input capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications   

RF Manual 16th edition

30 AMP MICRO-ISO AUTOMOTIVE RELAY

文件：164.56 Kbytes Page：3 Pages

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：157.87 Kbytes Page：9 Pages