EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE.

EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

音频功放晶体管

General Purpose Transistor, TO-126, -120V, -1A

• High Breakdown Voltage VCEO 120V, High Current 1A\n• Low Saturation Voltage and Good Linearity of hFE.;

EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE.

EPITAXIAL PLANAR PNP TRANSISTOR

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1GHz low voltage LNA and mixer

DESCRIPTION The SA631 is a combined low-noise BiCMOS amplifier, and mixer designed for high-performance low-power communication systems from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at the input. The gain is stabilized

1GHz low voltage LNA and mixer

DESCRIPTION The SA631 is a combined low-noise BiCMOS amplifier, and mixer designed for high-performance low-power communication systems from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at the input. The gain is stabilized

PROGAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY

Programmable Controllers AC / DC−Input Module Solid State Relay The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP632 is no−base internal connection for high−EMI environments.

Military DC-DC Power Supplies

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Military DC-DC Power Supplies

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