isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • Collector Power Dissipation- : PC= 30W@ TC= 25℃ • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A) • Complement to Type KTD2059 APPLICATIONS • Designed for general purpose ap

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low Collector-Emitter Saturation Voltage ● General Purpose Applications

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTD2059.

晶体管

TRIPLE DIFFUSED PNP TRANSISTOR

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Integrated Circuit Dual, Audio Power Amp, 2.3W to 5W (4.6W to 15W BTL)

Description: The NTE1367 is an integrated circuit in an 18–Lead DIP type package designed for use in audio output applications with low noise, low distortion and high output widely ranging for power supply and load resistance. Two amps are built in allowing for dual or BTL operation. Featu

Power Entry Modules

文件：182.19 Kbytes Page：2 Pages

Dual and Quad Precision Rail-to-Rail Input and Output Op Amps

文件：411.56 Kbytes Page：20 Pages

Dual and Quad Precision Rail-to-Rail Input and Output Op Amps

文件：411.56 Kbytes Page：20 Pages