丝印代码：KTB1366；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector Saturation Voltage Complementary to KTD2058

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low saturation voltage, complementary to KTD2058. Applications General purpose amplifier.

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Collector Power Dissipation : PC=25W (Tc=25ᴱ) • Complementary to KTD2058.

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Collector Power Dissipation- : PC= 25 W@ TC= 25℃ • Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) • Complement to Type KTD2058 APPLICATIONS • Designed for general purpose ap

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low Collector Saturation Voltage ● Complementary to KTD2058

TRIPLE DIFFUSED PNP TRANSISTOR

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TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Collector Power Dissipation : PC=25W (Tc=25ᴱ) • Complementary to KTD2058.

LOW FREQUENCY POWER AMPLIFIER

LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

LOW FREQUENCY POWER AMPLIFIER

LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012