TRIPLEDIFFUSEDPNPTRANSISTOR(GENERALPURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •LowCollectorSaturationVoltage :VCE(sat)=-1.0V(Max.)atIC=-2A,IB=-0.2A. •CollectorPowerDissipation :PC=25W(Tc=25ᴱ) •ComplementarytoKTD2058.

TO-220-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LowCollectorSaturationVoltage ●ComplementarytoKTD2058

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) •CollectorPowerDissipation- :PC=25W@TC=25℃ •LowCollectorSaturationVoltage- :VCE(sat)=-1.0V(Max)@(IC=-2A,IB=-0.2A) •ComplementtoTypeKTD2058 APPLICATIONS •Designedforgeneralpurposeap

SiliconPNPtransistorinaTO-220FPlasticPackage.

Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features Lowsaturationvoltage,complementarytoKTD2058. Applications Generalpurposeamplifier.

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TO-220-3LPlastic-EncapsulateTransistors

FEATURES LowCollectorSaturationVoltage ComplementarytoKTD2058

TRIPLEDIFFUSEDPNPTRANSISTOR

文件：451.92 Kbytes Page：2 Pages

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1MHz,800mASynchronousBuckConverter

文件：347.95 Kbytes Page：14 Pages