EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • A super-minimold package houses 2 transistor. • Excellent temperature response between these 2 transistor. • High pairing property in hFE. • The follwing characteristics are common for Q1, Q2.

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • A super-minimold package houses 2 transistor. • Excellent temperature response between these 2 transistor. • High pairing property in hFE. • The follwing characteristics are common for Q1, Q2.

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Complex General Purpose Transistor, TES6, -50V, -0.15A

• A super-minimold package houses 2 transistor\n• Simplify circuit design\n• Excellent temperature response between these 2 transistor\n• High pairing property in hFE;

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • A super-minimold package houses 2 transistor. • Excellent temperature response between these 2 transistor. • High pairing property in hFE. • The follwing characteristics are common for Q1, Q2.

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • A super-minimold package houses 2 transistor. • Excellent temperature response between these 2 transistor. • High pairing property in hFE. • The follwing characteristics are common for Q1, Q2.

Complex General Purpose Transistor, US6, -50V, -0.15A

• A super-minimold package houses 2 transistor\n• Excellent temperature response between these 2 transistor\n• High pairing property in hFE;

EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

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70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, hig

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

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LOW-POWER TINY SINGLE C-MOS OPERATIONAL AMPLIFIER?

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LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件：264.28 Kbytes Page：9 Pages