TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES)

HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES • High Voltage : VCEO=-600V. • High Speed Switching Time. : tf 1.0 s (IC=-0.5A) • Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) • Wide Safe Operating Area (SOA).

Switching Transistor, DPAK, -600V, -1A

• High Voltage : VCEO=-600V\n• Low Collector Emitter Saturation Voltage : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) . Wide Safe Operating Area (SOA).;

TRIPLE DIFFUSED PNP TRANSISTOR

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三极管

1.8 GHz POWER AMPLIFIER AND TRANSMIT/RECEIVE SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in DECT, Japan Personal Handy System (PHS) and other wireless Personal Communication Systems (PCS) applications. The MRFIC1807 includes a single–stage power amplifier and transmit/receive switch in a low–cost SOIC–16 package. The amplifier portion employs a depletion mod

3/ 6/ 9/ 12 / 15 / 18 VOICE ROM

Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile

18 Voice VROM

Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile

Integrated Circuit Head Amplifier Circuit for 2 Head VCR

Features: • Built–in Peaking Amplifier Circuit • Less Noise Voltage Referred to Input: 1µVrms

Programmable Maximum Duty Cycle PWM Controller

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