EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). • Low Noise : NF=1dB(Typ.), 10dB(Max.). • Complementary to KTC3875S.

General Purpose Transistor, SOT-23, -50V, -0.15A

• Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(typ.)\n• Complementary to KTC3875S.;

EPITAXIAL PLANAR PNP TRANSISTOR

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Epitaxial Planar PNP Transistor

■ Features ● Excellent hFE Linearity : hFE(0.1mA) / hFE(2mA)=0.95(Typ.). ● Low Noise : NF=1dB(Typ.), 10dB(Max.). ● Complementary to KTC3875S.

PNP Transistors

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HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

STANDARD RECOVERY RECTIFIER 1.5 AMPERES 400 VOLTS

Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • Compact Package with J–Bend Leads Ideal

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For amplification of low-frequency output ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half