EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTC2983D/L

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -0.5A APPLICATIONS · DC/DC converter,relay drivers,lamp drivers,motor drivers

General Purpose Transistor, DPAK, -160V, -1.5A

• High Transition Frequency : fT=100MHz(typ.)\n• Complementary to KTC2983D;

EPITAXIAL PLANAR PNP TRANSISTOR

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ALTERNISTORS

DESCRIPTION The TODV 625 ---> 1225 use high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer ) FEATURES .HIGH COMMUTATION : > 88 A/

.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle (θ1/2) of 5°. These devices are spectrally and mechanically matched to the VTE12xx serie

12-Bit Plus Sign mP Compatible A/D Converters

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12-Bit Plus Sign mP Compatible A/D Converters

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PC CARD CONTROLLERS

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