DISCRETE SEMICONDUCTOR Transistors

DISCRETE SEMICONDUCTOR Transistors Bipolar Transistors

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for power amplifier applications

High Output Current Differential Driver

NERAL DESCRIPTION The AD815 consists of two high speed amplifiers capable of supplying a minimum of 500 mA. They are typically configured as a differential driver enabling an output signal of 40 V p-p on ±15 V supplies. This can be increased further with the use of a coupling transformer with a g

High Output Current Differential Driver

NERAL DESCRIPTION The AD815 consists of two high speed amplifiers capable of supplying a minimum of 500 mA. They are typically configured as a differential driver enabling an output signal of 40 V p-p on ±15 V supplies. This can be increased further with the use of a coupling transformer with a g

Optocoupler with Photodarlington Output

Description The K815P/ K825P/ K845P consist of a photodarling ton optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance be tween

NPN (LOW, HIGH FREQUENCY AMPLIFIER, OSCILLATOR)

LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR • Complement to KSA539 • Collector-Base Voltage: VCBO=60V

High Sensitivity, High Density Mounting Type Photocoupler

■ Features 1. High current transfer ratio ( CTR: MIN. 600 at I F= 1mA, V CE = 2V) 2. High isolation voltage between input and output ( Viso: 5000V rms ) 3. Compact dual-in-line package PC815 : 1-channel type PC825 : 2-channel type PC835 : 3-channel type PC845 : 4-channel type 4