NPN Epitaxial Silicon Transistor

Features • High-Voltage Transistor

NPN Silicon Epitaxial Planar Transistor

FEATURES Collector-Emitter voltage:VCEO=300V. Collector current up to 500mA. Complement to A92. Small flat package. Power dissipation:Pd(max)=500mW. APPLICATIONS High voltage transistor.

Small Signal Schottky Diode

FEATURES • For general purpose applications • These diodes feature very low turn-on voltage and fast guard ring against excessive voltage, such as electrostatic discharges • These diodes are also available in the SOD-123 case with the type designations BAT42W-V to BAT43W-V and in MiniMELF S

Small Signal Schottky Diode

FEATURES • For general purpose applications • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • These diodes are also available in the DO-35 (DO-204AH) cas

QMT42 Series Fixed-Field Sensors

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