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KSR1002晶体管资料

  • KSR1002别名:KSR1002三极管、KSR1002晶体管、KSR1002晶体三极管

  • KSR1002生产厂家:韩国三星公司

  • KSR1002制作材料:Si-N+R

  • KSR1002性质:开关管 (SW)

  • KSR1002封装形式:直插封装

  • KSR1002极限工作电压

  • KSR1002最大电流允许值:0.1A

  • KSR1002最大工作频率:<1MHZ或未知

  • KSR1002引脚数:3

  • KSR1002最大耗散功率

  • KSR1002放大倍数

  • KSR1002图片代号:A-31

  • KSR1002vtest:0

  • KSR1002htest:999900

  • KSR1002atest:0.1

  • KSR1002wtest:0

  • KSR1002代换 KSR1002用什么型号代替:AA1A4M,DTC114EN,DTC114ES,KRC1002,RN1002,UN1211,UN4211,

型号 功能描述 生产厂家 企业 LOGO 操作
KSR1002

Switching Application (Bias Resistor Built In)

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to KSR2002

FAIRCHILD

仙童半导体

KSR1002

NPN (SWITCHING APPLICATION)

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to KSR2002

SAMSUNG

三星

KSR1002

NPN (SWITCHING APPLICATION)

SAMSUNG

三星

KSR1002

Switching Application (Bias Resistor Built In)

ONSEMI

安森美半导体

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

PANJIT

強茂

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MOTOROLA

摩托罗拉

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp

NTE

KSR1002产品属性

  • 类型

    描述

  • 型号

    KSR1002

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    Switching Application(Bias Resistor Built In)

更新时间:2026-5-22 14:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SMG
05+
原厂原装
26051
只做全新原装真实现货供应
仙童
24+
TO-92
5000
FAIRCHILD/仙童
23+
TO92
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
FAIRCHILD/仙童
23+
TO92
50000
全新原装正品现货,支持订货
TO-92
8560
一级代理 原装正品假一罚十价格优势长期供货
仙童
24+
TO92
5000
全现原装公司现货
FAIRCHILD/仙童
25+
TO92
10000
原装现货假一罚十
FAIRCHILD/仙童
11+
TO92
470

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