B/W TV Horizontal Deflection Output

B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=300V • Collector Current : IC=6A • Collector Dissipation : PC=40W(TC=25°C)

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 300V(Min) • Collector Current- IC= 6A • Collector Power Dissipation- : PC= 40W@ TC= 25℃ APPLICATIONS • Designed for B/W TV horizontal deflection output applications.

NPN外延硅晶体管

•集电极-基极电压：VCBO = 300 V\n•集电极电流：IC= 6 A\n•集电极损耗：PC= 40 W (TC= 25°C)B/W TV 水平偏转输出;

B/W TV Horizontal Deflection Output

文件：65.95 Kbytes Page：4 Pages

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 120V 6A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 120V 6A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

B/W TV Horizontal Deflection Output

文件：65.95 Kbytes Page：4 Pages

120V,6A,General Purpose NPN Bipolar Transistor

丝印代码：T146；Digital transistors (built-in resistor)

Features In addition to the features of regular digital transistors, 1) Low VCE(sat) makes these transistors optimal for muting circuits. VCE(sat) = 40mV (Typ.) (IC/IB = 50mA/2.5mA) 2) They can be used at high current (IC = 600mA).

Silicon NPN Transistor RF Power Amp, PO = 4W

Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: ● Designed for UHF Military and Commercial Equipment ● 4W (Min) with Greater than 8dB Gain ● Withstands Infinite VSWR Under Operating Conditions ● Low Inductance St

LM363 Precision Instrumentation Amplifier

文件：452.17 Kbytes Page：22 Pages

丝印代码：C363ES；Digital transistors (built-in resistors)

文件：105.46 Kbytes Page：4 Pages

LM363 Precision Instrumentation Amplifier

文件：452.17 Kbytes Page：22 Pages