Low Frequency Amplifier Medium Speed Switching

Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW • Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base) • Non suffix “-C” means Side Collector

NPN Epitacial Silicon Transistor

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 60V 0.7A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 60V 0.7A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Epitacial Silicon Transistor

文件：151.42 Kbytes Page：5 Pages

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

Wire Wound

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RF LDMOS Wideband Integrated Power Amplifier

PRI TRANSFORMERS Reinforced Insulation

文件：51.21 Kbytes Page：1 Pages

RF LDMOS Wideband Integrated Power Amplifiers

文件：594.33 Kbytes Page：16 Pages