Low Frequency Power Amplifier

Low Frequency Power Amplifier • Low Collector- Emitter Saturation Voltage • Complement to KSD1221

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.7V(Max) @IC= -3A · Complement to KSD1221 APPLICATIONS · Low frequency amplifier

Low Frequency Power Amplifier

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS PNP 60V 3A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(15A,90W)

Integrated Circuit Dual, High Frequency, Differential Amplifier

Description: The NTE906 is an integrated circuit in a 12–Lead TO5 type package consisting of two independent differential amplifiers with associated constant–current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general–purpose devices which e

0 to 6 kPa (0 to 24 in. H2O) WATER VAPOR COMPATIBLE 20 mV FULL SCALE SPAN (TYPICAL)

文件：114.24 Kbytes Page：6 Pages

0 to 6 kPa (0 to 24 in. H2O) WATER VAPOR COMPATIBLE 20 mV FULL SCALE SPAN (TYPICAL)

文件：114.24 Kbytes Page：6 Pages

0 to 6 kPa (0 to 24 in. H2O) WATER VAPOR COMPATIBLE 20 mV FULL SCALE SPAN (TYPICAL)

文件：114.24 Kbytes Page：6 Pages