PNP (DRIVER STAGE AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS)

DRIVER STAGE OF AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS • Complement to KSC2310 • Collector-Emitter Voltage VCEO= -150V • Output Capacitance: Cob=5pF (MAX)

Driver Stage Of Audio Amplifier & High Voltage Switching Applications

Driver Stage Of Audio Amplifier & High Voltage Switching Applications • Collector-Emitter Voltage : VCEO= -150V • Output Capacitance : Cob=5pF (MAX.) • Complement to KSC2310

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.8 W (Tamb=25℃) Collector current ICM: -0.05 A Collector-base voltage V(BR)CBO: -150 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

T O-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● General Purpose Amplifier Transistor

Driver Stage Of Audio Amplifier & High Voltage Switching Applications

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS PNP 150V 0.05A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：带盒（TB） 描述：TRANS PNP 150V 0.05A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

VHF variable capacitance diode

DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.5; ratio:

POWER TRANSISTORS(15A,90W)

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. ■ STMicroelectronics PREFERRED SALESTYPES

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and