HEXFET Power MOSFET

Features • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Dynamic dv/dt Rating • Fast Switching

P-MOSFETs

High Ouput Power Doubler 750 MHz CATV Amplifier

High Ouput Power Doubler 750 MHz CATV Amplifier • Specified for 77 and 110–Channel Performance • Broadband Power Gain - @ f = 40–750 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transistors • Composite Triple Be

High Ouput Power Doubler 750 MHz CATV Amplifier

Designed specifically for 750 MHz CATV applications. Features ionimplanted, arsenic emitter transistors with an all gold metallization system. • Supply Voltage = 24 Vdc • 6th Generation Die Technology • Specified for 110 Channel Performance • Broadband Power Gain @ f = 50 MHz Gp =

High Ouput Power Doubler 750 MHz CATV Amplifier

High Ouput Power Doubler 750 MHz CATV Amplifier • Specified for 77 and 110–Channel Performance • Broadband Power Gain - @ f = 40–750 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transistors • Composite Triple Be

MPEG-2 systems demultiplexer

GENERAL DESCRIPTION This document specifies the MPEG-2 systems demultiplexer IC, SAA7205H, for use in MPEG-2 based digital TV receivers, possibly incorporating conditional access. Such receivers are to be implemented in, for instance, a Digital Video Broadcasting (DVB) set-top box, or Integrated

MPEG-2 systems demultiplexer

GENERAL DESCRIPTION This document specifies the MPEG-2 systems demultiplexer IC, SAA7205H, for use in MPEG-2 based digital TV receivers, possibly incorporating conditional access. Such receivers are to be implemented in, for instance, a Digital Video Broadcasting (DVB) set-top box, or Integrated