EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

Complex BRT, US6, 50V, 0.1A

• With Built-in Bias Resistors\n• Simplify circuit design\n• Reduce a Quantity of Parts and Manufacturing Process\n• High Packing Density.;

2 A, High-Side P-Channel Switch with Current Limit and Thermal Shutdown

GENERAL DESCRIPTION The ADM869L is a logic controlled P-channel switch with low on resistance, capable of sourcing up to 2 A from supply voltages between 2.7 V and 5.5 V. A user-settable current limit allows the trip current to be set between 400 mA and 2 A with an accuracy of ±21. This allows th

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-202 plastic package. PNP complement: BF872. FEATURES • Low feedback capacitance. APPLICATIONS • For use in class-B video output stages in colour television receivers.

NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR

FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS - FZT869

Integrated Circuit Dual, High Speed, Programmable Current Mode (Norton) Amp

Description: The NTE869 consists of two current differencing (Norton) input amplifiers. Emphasis has been placed on obtaining high frequency performance and providing user programmable amplifier operating characteristics. Each amplifier is broadbanded to provide a high gain bandwidth product, f

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

FEATURES * 25 Volt VCEO * 5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High Gain * Ptot=1.2 Watts