EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Output Current : 800mA.

High Current BRT, TS6, 50V, 0.8A

• With Built-in Bias Resistors\n• Simplify Circuit Design\n• Reduce a Quantity of Parts and Manufacturing Process\n• High Output Current : 800mA.;

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

TO-220 8A Triac

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