EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

General Purpose BRT, USM, 50V, 0.1A

• With Built-in bias resistors\n• Simplify circuit design\n• Reduce a quantity of Parts and Manufacturing Process.;

General Purpose BRT, ESM, 50V, 0.1A

• With Built-in bias resistors\n• Simplify circuit design\n• Reduce a quantity of Parts and Manufacturing Process.;

SEMICONDUCTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

SEMICONDUCTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ S

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

3.0 mm X 7.0 mm Series

文件：32.159 Kbytes Page：1 Pages