EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

Schottky Barrier Diodes

FEATURES • Integrated protection ring against static    discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

1036- 횞 1010-pixel ccd image sensor

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Low Dropout 1 Ampere Linear Regulator Family

文件：102.7 Kbytes Page：10 Pages

Low Dropout 1 Ampere Linear Regulator Family

文件：102.7 Kbytes Page：10 Pages