EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Packing Density.

Complex BRT, TESV, -50V, -0.1A

• With Built-in bias resistors\n• Simplify circuit design\n• Reduce a quantity of Parts and Manufacturing Process\n• High Packing Density.;

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60 (Typ) • Cost Effective PowerMac

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文件：209.34 Kbytes Page：6 Pages

TIMER

文件：209.34 Kbytes Page：6 Pages

TIMER

文件：209.34 Kbytes Page：6 Pages

TIMER

文件：209.34 Kbytes Page：6 Pages