EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.

General Purpose BRT, USM, -50V, -0.1A

• With Built-in bias resistors\n• Simplify circuit design.\n• Reduce a quantity of Parts and Manufacturing Process;

USM PACKAGE

文件：32.25 Kbytes Page：1 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICAT FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process. • High Packing Density..

General Purpose BRT, ESM, -50V, -0.1A

• With Built-in bias resistors\n• Simplify circuit design\n• Reduce a quantity of Parts and Manufacturing Process\n• High Packing Density.;

EPITAXIAL PLANAR PNP TRANSISTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process. • High Packing Density.

General Purpose BRT, VSM, -50V, -0.1A

• With Built-in bias resistors\n• Simplify circuit design\n• Reduce a quantity of Parts and Manufacturing Process\n• High Packing Density.;

USM PACKAGE

文件：32.25 Kbytes Page：1 Pages

USM PACKAGE

文件：25.76 Kbytes Page：1 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：780.85 Kbytes Page：7 Pages

USM PACKAGE

文件：25.76 Kbytes Page：1 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：780.85 Kbytes Page：7 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：112.93 Kbytes Page：6 Pages

VSM PACKAGE

文件：364.33 Kbytes Page：1 Pages

VSM PACKAGE

文件：364.33 Kbytes Page：1 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：112.93 Kbytes Page：6 Pages

HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

High Efficiency Rectifiers

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirem