EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. • Complementary to the KN2907/2907A.

General Purpose Transistor, TO-92, 40V, 0.6A

• Low Leakage Current : ICEX=10nA(max) ; VCE=60V, VEB(off)=3V\n• Low Saturation Voltage: VCE(sat)=03V(max) ; Ic=150mA, IB=15mA\n• Complementary to the KN2907A;

EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. • Complementary to the KN2907S/2907AS.

General Purpose Transistor, SOT-23, 40V, 0.6A

• Low Leakage Current : ICEX=10nA(max) ; VCE=60V, VEB(off)=3V\n• Low Saturation Voltage: VCE(sat)=03V(max) ; Ic=150mA, IB=15mA\n• Complementary to KN2907AS;

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. • Complementary to the KN2907S/2907AS.

Quad General Purpose Transistors

Quad General Purpose Transistors NPN Silicon

Quad General Purpose Transistors

Quad General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement