商品目录 MOS(场效应管) 连续漏极电流（Id）（25°C 时） 7.5A(Tc) 漏源电压（Vdss） 600V 栅源极阈值电压 4V @ 250uA 漏源导通电阻 1.2 Ω @ 3.75A,10V 类型 N 沟道 最大功率耗散（Ta） 48W(Tc)

文件：192.03 Kbytes Page：6 Pages

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

isc N-Channel Mosfet Transistor

·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：217.21 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：473.72 Kbytes Page：7 Pages

8A 600V N-channel Enhancement Mode Power MOSFET

文件：879.04 Kbytes Page：12 Pages