N- and P-Channel 12-V (D-S) MOSFET

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N+P MOSFETs

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

HANDSFREE CONTROLLER

DESCRIPTION This 28 pins IC is an innovative approach to quality handsfreetelephonesets. It results froman extensive research onspeechsignal. ■ NOISE/SPEECH DISCRIMINATION IN EMIS SION AND RECEPTION ■ INTEGRATED SIGNAL GAIN COMPRESSOR IN BOTH MODES ■ PROGRAMMABLE ATTENUATORS IN BOTH MODES ■ A

Single Rail ADPCM CODEC

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Single Rail ADPCM CODEC

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