N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 500V, ID= 5.0A •

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.\n\nFEATURES\nVDSS= 500V, ID= 5.0A\nDrain VDSS= 500V, ID= 5.0A\nDrain-Source ON Resistance : RDS(ON)=1.5 @VGS= 10V\nQg(typ.) = 21nC;