N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and switching mode power supplies. FEATURES • VDSS(Min.)= 400V, ID= 4.2A •

Planar MOSFETs, DPAK(1), 400V, 4.2A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using switching mode power supplies.;

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and switching mode power supplies. FEATURES • VDSS(Min.)= 400V, ID= 4.2A •

N CHANNEL MOS FIELD EFFECT TRANSISTOR

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400V N-Channel MOSFET

Features • 4.5A, 400V, RDS(on) = 1.6Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 7.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

PowerMOS transistor Isolated version of PHP10N40E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

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