VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND

VCO FOR UHF/VHF BAND. FEATURES • High Capacitance Ratio : C1V/C4V =2.0(Typ.) • Low Series Resistance : rs=0.39 (Typ.)

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

VCO FOR UHF/VHF BAND.FEATURES\n● High Capacitance Ratio : C1V/C4V =2.0(Typ.)\n● Low Series Resistance : rs=0.39 (Typ.) ● High Capacitance Ratio : C1V/C4V =2.0(Typ.)\n● Low Series Resistance : rs=0.39 (Typ.);

SILICON EPITAXIAL PLANAR DIODE

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Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs High–Performance Silicon–Gate CMOS The MC74HCT273A may be used as a level converter for interfacing TTL or NMOS outputs to High–Speed CMOS inputs. The HCT273A is identical in pinout to the LS273. This device c

OCTAL D-TYPE FLIP FLOP WITH CLEAR

DESCRIPTION The 74VHCT273A is an advanced high-speed CMOS OCTAL D-TYPE FLIP FLOP WITH CLEAR fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: fMAX = 170 MHz (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ COMPATIBLE

Square Type

Square Type □ 5.0 mm × 5.0 mm Series

Square Type

□ 5.0 mm × 5.0 mm Series

Silicon Darlington Complementary Power Amplifiers

Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: • High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC