VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)

VCO FOR UHF/VHF BAND. FEATURES • High Capacitance Ratio : C1V/C4V =2.0(Typ.) • Low Series Resistance : rs=0.39Ω (Typ.)

ESC PACKAGE

Marking method Laser Marking

SILICON EPITAXIAL PLANAR DIODE

文件：210.1 Kbytes Page：2 Pages

ESC PACKAGE

Marking method Laser Marking

SILICON EPITAXIAL PLANAR DIODE

文件：210.1 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：531.84 Kbytes Page：2 Pages

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs High–Performance Silicon–Gate CMOS The MC74HCT273A may be used as a level converter for interfacing TTL or NMOS outputs to High–Speed CMOS inputs. The HCT273A is identical in pinout to the LS273. This device c

OCTAL D-TYPE FLIP FLOP WITH CLEAR

DESCRIPTION The 74VHCT273A is an advanced high-speed CMOS OCTAL D-TYPE FLIP FLOP WITH CLEAR fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: fMAX = 170 MHz (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ COMPATIBLE

Square Type

Square Type □ 5.0 mm × 5.0 mm Series

Square Type

□ 5.0 mm × 5.0 mm Series

Silicon Darlington Complementary Power Amplifiers

Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: • High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC