VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)

TV TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=6.5(Typ.) • Low Series Resistance : rS=0.4Ω(Typ.) • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.

Silicon Epitaxial Planar Diode

Silicon Epitaxial Planar Diode Features • High Capacitance Ratio : C2V/C25V=6.5(Typ.) • Low Series Resistance : rS=0.4Ω (Typ.) • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

TV TUNING.\n\nFEATURES\n·High Capacitance Ratio : C2V/C25V=6.5(Typ.)\n·Low Series Resistance : rS=0.4Ω(Typ.)\n·Excellent C-V Characteristics, and Small Tracking Error.\n·Useful for Small Size Tuner. ·High Capacitance Ratio : C2V/C25V=6.5(Typ.)\n·Low Series Resistance : rS=0.4Ω(Typ.)\n·Excellent C-V Characteristics, and Small Tracking Error.\n·Useful for Small Size Tuner.;

USC PACKAGE

文件：349.87 Kbytes Page：1 Pages

USC PACKAGE

TV TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=6.3(Min.) • Low Series Resistance : rS=0.57Ω (Max.) • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)

TV TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=6.3(Typ.) • Low Series Resistance : rS=0.57Ω (Max.) • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.

ESC TV Tuning 32V 14.15Pf 15.75pF 2.06 2.35 6.3

. High Capacitance Ratio : C2V/C25V=6.5(typ.). Low Series Resistance : rs=0.4ohm (typ.). Excellent C-V characteristics, and Small Tracking Error Useful for Small Size Tuner.;

ESC PACKAGE

TV TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=6.3(Typ.) • Low Series Resistance : rS=0.57Ω (Max.) • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.

ESC TV Tuning. 32V 14.15Pf 15.75pF 1.96 2.25 6.3

• High Capacitance Ratio : C2V/C25V=6.3(Typ.)\n• Low Series Resistance : rS=0.57Ω(Max.)\n• Excellent C-V Characteristics, and Small Tracking Error.\n• Useful for Small Size Tuner.;

VSC PACKAGE

Marking method Laser Marking

VSC PACKAGE

Marking method Laser Marking

USC PACKAGE

文件：349.87 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：368.11 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：77.5 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：77.5 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

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SILICON EPITAXIAL PLANAR DIODE

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CCD Video Camera Signal Processor ICs

■ Overview The AN2145NFHP is a CCD video camera signal processor IC for 510H CCD. It incorporates full chroma signal LPFs and horizontal aperture correction circuits. Because carrier-balance is rationalized and ajustment-free, adjustments and necessary external components are reduced half in numb

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

LOW DROP POWER SCHOTTKY RECTIFIER

Description Schottky rectifiers designed for high frequency miniature switched mode power supplies such as adaptors and on board DC/DC converters. Packaged in SMA or SMB, the STPS1L30 is ideal for use in parallel with MOSFETs in synchronous rectification. Features • Very low forward voltage dr

Silicon NPN Transistor Darlington Driver

Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO •

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE