SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : SOT-23. • Low Forward Voltag : VF=0.92V(Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=2.2pF(Typ.). • Suffix U : Qualified to AEC-Q101. ex) KDS187-RTK/HU

Small Signal Switching Diode, SOT-23, 80V, 300mA

• Low Forward Voltage : VF=0.92V (typ.)\n• Fast Reverse Recovery Time : trr=1.6nS(typ.)\n• Small Total Capacitance : CT=2.2pF (typ.)\n• Small Package : SOT-23.;

SILICON EPITAXIAL PLANAR DIODE

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High-Speed Drivers with JFET Switch

Analog Switches with Dviver

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 5.5 max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Array LED 2 mm LED, Diffused

Features ● colored, diffused package ● for use as optical indicator ● available as multiple array (LED) ● load dump resistant acc. to DIN 40839

Silicon Complementary Transistors Medium Power Audio Amplifier

Features: • 5W Output in Complementary Pair

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE