| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KBU808G | GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 4 / 6 / 8 Amperes FEATURES ● Surge overload rating -125~175 amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has UL ● Mounting postition:A | HY 虹扬科技 | ||
KBU808G | GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ● Surge overload rating -175 amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has UL ● Mounting postition:Any ● Mounting torgue:5 In.Ib.Max | HY 虹扬科技 | ||
KBU808G | SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES * Ideal for printed circuit board * Reliable low cost construction * Plastic material has Underwriters Laboratory flammability classifications 94V.O * Surge overload rating 200 amperes peak. | JGD 固锝电子 | ||
KBU808G | Voltage 50V ~ 1000V 8.0Amp Glass Passivited Bridge Rectifiers FEATURES • Surge overload rating -175 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has Underwriters Laboratory • Mounting postition:Any • Mounting torgue:5 In.Ib.Max | SECOS 喜可士 | ||
KBU808G | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER Features ● Glass Passivated Die Construction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards | WTE Won-Top Electronics | ||
KBU808G | 8.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards Recognized File # E157705 | WTE Won-Top Electronics | ||
KBU808G | 桥式整流器 KBU/IF:8A/ Vol:800V/ VF@IF:4A=>1.1V/ Tj:-55~150℃/ | HY 虹扬科技 | ||
KBU808G | 8.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER 文件:52.8 Kbytes Page:4 Pages | WTE Won-Top Electronics | ||
KBU808G | Glass Passivated Bridge Rectifiers 文件:416.43 Kbytes Page:3 Pages | HY 虹扬科技 | ||
Glass Passivated Bridge Rectifier Features * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High surge current capability * Ideal for printed circuit boards | COMCHIP 典琦 | |||
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A) VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O | PANJIT 強茂 | |||
Single Element Detector The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap | PERKINELMER | |||
Single Element Detector The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap | PERKINELMER | |||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184) | NEC 瑞萨 | |||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184) | NEC 瑞萨 |
KBU808G产品属性
- 类型
描述
- VRRM(V):
800
- IO(A):
8
- IFSM(A):
175
- VF(V):
1.10
- IR(uA):
10
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEP品牌 |
25+ |
. |
66880 |
原装正品,欢迎询价 |
|||
台产 |
23+ |
排桥 |
80000 |
主营桥堆系列,真实库存 |
|||
TSC |
2023+环保现货 |
扁桥 |
88000 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
KBU808G芯片相关品牌
KBU808G规格书下载地址
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KBU808G数据表相关新闻
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2012-11-9
DdatasheetPDF页码索引
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