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型号 功能描述 生产厂家 企业 LOGO 操作
KBU603G

Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers

Feature ◇ UL Recoganized File # E-326243 ◇ Ideal for printed circuit board ◇ High case dielectric strength ◇ Plastic material has Underwriters laboratory flammability Classification 94V-0 ◇ Typical IR less than 0.1uA ◇ High surge current capability ◇ High temperature soldering

TSC

台湾半导体

KBU603G

Glass Passivated Bridge Rectifiers`

文件:206.4 Kbytes Page:4 Pages

TSC

台湾半导体

KBU603G

Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers

文件:169.39 Kbytes Page:2 Pages

TSC

台湾半导体

KBU603G

Single Phase 6.0AMPS. Glass Passivated Bridge Rectifiers

文件:189.55 Kbytes Page:2 Pages

TSC

台湾半导体

KBU603G

Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers

文件:520.919 Kbytes Page:2 Pages

TSC

台湾半导体

KBU603G

封装/外壳:4-SIP,KBU 包装:托盘 描述:DIODE BRIDGE 6A 200V KBU 分立半导体产品 二极管 - 桥式整流器

TSC

台湾半导体

KBU603G

6A, 200V, Standard Bridge Rectifier

TSC

台湾半导体

封装/外壳:4-SIP,KBU 包装:管件 描述:BRIDGE RECT 1PHASE 200V 6A KBU 分立半导体产品 二极管 - 桥式整流器

TSC

台湾半导体

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 1600 V Mean on-state current 720 A Surge current 8.8 kA

POSEICO

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 6.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package ha

PANJIT

強茂

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes)

SUPER FAST RECOVERY RECTIFIER VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters

PANJIT

強茂

TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

GENERAL DESCRIPTION Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brus

PHILIPS

飞利浦

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to µPA602T • Automatic mounting

NEC

瑞萨

KBU603G产品属性

  • 类型

    描述

  • VRRM (V):

    200

  • IF(AV) (A):

    6

  • IFSM (A):

    175

  • IR (µA):

    5

  • VF (V):

    1.1

  • Status:

    Active

  • AEC-Q:

    No

  • TJ Max. (°C):

    150

  • Family:

    Standard

  • MSL:

    NA

更新时间:2026-5-20 17:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TaiwanSemiconductor
24+
NA
3000
进口原装正品优势供应
26+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择
台产
24+
排桥
80000
主营桥堆系列,真实库存
TSC
2023+环保现货
扁桥
88000
专注军工、汽车、医疗、工业等方案配套一站式服务

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