Silicon-Bridge Rectifiers

Silicon-Bridge Rectifiers

SILICON BRIDGE RECTIFIERS

FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

BRIDGE RECTIFIERS 10 Amps

BRIDGE RECTIFIERS 10 Amps

Bridge Rectifiers

FEATURES UL recognition file number E230084 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting High surge current capability Low thermal resistance Solder dip 275 °C max. 7 s, per JESD 22-B106

CURRENT 25.0 Amperes VOLTAGE 50 to 1000 Volts

Features · Diffused Junction · Low Reverse Leakage Current · Low Power Loss, High Efficiency · Surge Overload Rating to 400A Peak · Electrically Isolated Metal Case for Maximum Heat Dissipation · High Case Dielectric Strength of 1500VRMS

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes FEATURES * Surge overload ratings-400 Amperes * Metal case for Maximum Heat Dissipation * Low forward voltage drop

SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 10/15/25/35/50 Amperes FEATURES ● Surge overload -240~500 Amperes peak ● Low forward voltage drop ● Mounting Position : Any ● Electrically isolated base -2000 Volts ● Materials used carries U/L recognition

SILICON BRIDGE RECTIFIERS

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A FEATURES ◇ Rating to 1000V PRV ◇ Surge overload rating to 300 Amperes peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 meth

SINGLE-PHASE SILICON BRIDGE

VOLTAGE RANGE 50 TO 1000 VOLTS PRV CURRENT 25 Amperes FEATURES ■ UL recognized file #E149311 ■ Surge overload rating-300 amperes peak ■ Solderable cooper leads 0.40 diameter ■ Low forward voltage drop ■ Mounting position: Any ■ Electrically isolated base-1800 Volts ■ Mate

15,25,35A HIGH CURRENT BRIDGE RECTIFIER

Features ● Diffused Junction ● Low Reverse Leakage Current ● Low Power Loss, High Efficiency ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Case to Terminal Isolation Voltage 2500V ● Recognized File # E157705

25A SINGLE-PHASE BRIDGE RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards ● Designed for Saving Mounting Space ● UL Recognized File # E157705

Silicon Bridge Rectifiers

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A Features ◇ Rating to 1000V PRV ◇ Surge overload rating to 300 Amperes peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202

SILICON BRIDGE RECTIFIERS

FEATURES Rating to 1000V PRV Surge overload rating to 300 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208

ASEMI Bridge Rectifier

This series is SGS listed under the Recognized Component Index, file number SZXEC1902259902 The plastic material used carries Underwriters Laboratory flammability recognition 94V-0 Surge overload ratings to 300 amperes High temperature soldering guaranteed 265 C/10 seconds at 5 lbs (2.3kg) t

SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes FEATURES ● Low cost ● This series is UL recognized under component index, file number E127707 ● High forward surge current capability ● Ideal for printed circuit board ● High isolation voltage from case to leads ● High temperature soldering

标准整流桥

• UL recognition file number E230084\n• High surge current capability;

25A 400V Rectifying bridge

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SINGLE-PHASE SILICON BRIDGE RECTIFIER

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SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

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SILICON BRIDGE RECTIFIERS

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桥式整流管

Bridge Rectifiers

SINGLE-PHASE BRIDGE RECTIFIER

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Ideal for printed circuit board

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封装/外壳：4-方形，KBPC-W 包装：管件 描述：BRIDGE RECT 1P 400V 25A KBPC-W 分立半导体产品 二极管 - 桥式整流器

Single Phase Silicon Bridge Rectifier

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Single Phase Silicon Bridge Rectifier

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Single Phase Silicon Bridge Rectifier

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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丝印代码：MDDKBPC2504W；SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

Reverse Voltage: 50 to 1000V Forward Current: 10/15/25/35/50A RoHS Device Features - Surge overload-240~500 Amperes peak - Low forward voltage drop - Electrically isolated base -2000 Volts - Materials used carries U/L recognition

封装/外壳：4-方形，KBPC-W 包装：散装 描述：BRIDGE RECT 1P 400V 25A KBPC-W 分立半导体产品 二极管 - 桥式整流器

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 25 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • The plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge overload ratings to 300 Amperes .

IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES ● Plastic Case With Heatsink For Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● The plastic package has Underwriters Laboratory Flammability Classification 94V-O

Silicon NPN Transistor High Gain Audio Amplifier

Features: • Large Current Capacity (IC = 2A) • Adoption of MBIT Process • High DC Current Gain: hFE = 800 to 3200 • Low Collector–Emitter Saturation Voltage: VCE(sat)